Novel single-layer photoresist containing cycloolefins for 193 nm

被引：5

作者：

Park, JH ^{[1
]}

Seo, DC ^{[1
]}

Kim, KD ^{[1
]}

Park, SY ^{[1
]}

Kim, SJ ^{[1
]}

Lee, W ^{[1
]}

Jung, JC ^{[1
]}

Bok, CK ^{[1
]}

Baik, KH ^{[1
]}

机构：

[1] Korea Kumho Petrochem Co Ltd, Kumho Chem Labs, Yuseong Gu, Taejon, South Korea

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

193 nm lithography; maleic anhydride; cycloolefin; photoresist; etch resistance;

D O I：

10.1117/12.312449

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

New matrix resins containing maleic anhydride and cycloolefin units for ArF excimer laser resist have been developed. Several series of these matrix resins having good dry-etching durability were prepared by Free radical polymerization using AIBN as free radical initiator. All of the resists using the matrix resins revealed good coating uniformity and adhesion to silicon wafer, and were readily soluble in a variety of resist solvents such as MMP, EEP, PGMEA and EL. In preliminary 193 nm testing a resist formulated with the matrix resins sulfonium triflate as photoacid generator afforded positive images with 0.14 um L/S resolution. In this paper, we will discuss the polymerization results and lithographic properties for 193 nm exposure tool.

引用

页码：454 / 462

页数：5

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