Electrical conductivity and dielectric relaxation in non-crystalline films of tungsten trioxide

被引:40
作者
Hutchins, M. G.
Abu-Alkhair, O.
El-Nahass, M. M. [1 ]
Abdel-Hady, K.
机构
[1] Oxford Brookes Univ, Sch Engn, Oxford OX3 0BP, England
[2] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah, Saudi Arabia
[3] Ain Shams Univ, Fac Educ, Dept Phys, Cairo 11757, Egypt
[4] Menia Univ, Fac Sci, Dept Phys, Al Minya, Egypt
关键词
conductivity; dielectric properties; relaxation; electric modulus;
D O I
10.1016/j.jnoncrysol.2007.06.042
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Amorphous tungsten trioxide (a-WO3) thin films were prepared by thermal evaporation technique. The electrical conductivity and dielectric properties of the prepared films have been investigated in the frequency range from 100 Hz to 100 kHz and in the temperature range 293-393 K. In spite of the absence of the dielectric loss peaks, application of the dielectric modulus formulism gives a simple method for evaluating the activation energy of the dielectric relaxation. The frequency dependence of sigma(omega) follows the Jonscher's universal dynamic law with the relation sigma(omega) = sigma(dc) + A omega(s), where s is the frequency exponent. The conductivity in the direct regime, sigma(dc), is described by the small polaron model. The electrical conductivity and dielectric properties show that Hunt's model is well adapted to a-WO3 films. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:4137 / 4142
页数:6
相关论文
共 57 条
[41]   CHARACTERIZATION OF DIFFUSION PROCESS IN OXIDE GLASSES BASED ON CORRELATION BETWEEN ELECTRIC CONDUCTION AND DIELECTRIC-RELAXATION [J].
NAMIKAWA, H .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 18 (02) :173-195
[42]  
Ngai K. L., 1979, Comments on Solid State Physics, V9, P127
[43]  
Ngai K. L., 1980, Comments on Solid State Physics, V9, P141
[44]  
NGAI KL, 1987, NONDEBYE RELAXATION, P23
[45]   Optical and structural characteristics of sol-gel-deposited tungsten oxide and vanadium-doped tungsten oxide films [J].
Özkan, E ;
Tepehan, FZ .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 68 (3-4) :265-277
[46]   LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J].
POLLAK, M ;
GEBALLE, TH .
PHYSICAL REVIEW, 1961, 122 (06) :1742-&
[47]   PROTON DIFFUSION IN TUNGSTEN TRIOXIDE THIN-FILMS [J].
RANDIN, JP ;
VIENNET, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2349-2354
[48]   Influence of network modifiers on conductivity and relaxation parameters in some series of fluoride glasses containing LiF [J].
Reau, JM ;
Jun, XY ;
Senegas, J ;
LeDeit, C ;
Poulain, M .
SOLID STATE IONICS, 1997, 95 (3-4) :191-199
[49]   Electrochromic effect in WO3 thin films prepared by spray pyrolysis [J].
Regragui, M ;
Addou, M ;
Outzourhit, A ;
El Idrissi, E ;
Kachouane, A ;
Bougrine, A .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 77 (04) :341-350
[50]   Electrical and optical properties of WO3 thin films [J].
Regragui, M ;
Jousseaume, V ;
Addou, M ;
Outzourhit, A ;
Bernéde, JC ;
El Idrissi, B .
THIN SOLID FILMS, 2001, 397 (1-2) :238-243