Low temperature electric transport properties in hydrogenated microcrystalline silicon films

被引：14
作者：
Ambrosone, G.
Coscia, U.
Cassinese, A.
Barra, M.
Restello, S.
Rigato, V.
Ferrero, S.
机构：
[1] Univ Napoli Federico II, Dipartimento Sci Fisiche, CNISM, Naples, Italy
[2] Univ Napoli Federico II, CNR INFM Coherentia, Naples, Italy
[3] Lab Nazl Legnaro, Ist Nazl Fis Nucl, I-35020 Legnaro, Italy
[4] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 19期
关键词：
microcrystalline silicon; DC conductivity; variable range hopping;
D O I：
10.1016/j.tsf.2006.11.180
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The dark conductivity of microcrystalline silicon (mu c-Si:H) films, deposited in a RF-PECVD system varying the RF power in the 15-100 W range, has been investigated as a function of the temperature. Under low electric field condition (10(3) V/cm), the conductivity of the samples as a function of the exponential of T-1/4 presents a linear behaviour in the measured temperature range. The density of states near the Fermi level, the range of hopping and the activation energy for hopping have been evaluated using the diffusion model. A correlation between the hopping parameters and the crystallinity degree has been found. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：7629 / 7633
页数：5
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