The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

被引：3

作者：

Kryzhanovskaya, NV ^{[1
]}

Gladyshev, AG ^{[1
]}

Sizov, DS ^{[1
]}

Kovsh, AR ^{[1
]}

Tsatsul'nikov, AF ^{[1
]}

Chi, JY ^{[1
]}

Wang, JS ^{[1
]}

Wei, L ^{[1
]}

Ustinov, VM ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷

关键词：

GaAsN; quantum dot; molecular-beam epitaxy; photoluminescence; laser;

D O I：

10.1117/12.510522

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Optical properties of GaAsN/GaAs heterostructures with different N contents grown by molecular-beam epitaxy were investigated. We show that under the certain grows regimes the optical properties of the GaAsN layers are determined by recombination via localized states which is due to composition fluctuation. An increase in the N concentration leads to increase in composition fluctuation and, correspondingly, to increase in energy of localized states. Thermal annealing reduces nonuniformity distribution of nitrogen atoms. In short-period GaAsN/GaAs superlattice the effects of phase separation can be enhanced.

引用

页码：38 / 41

页数：4

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