Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

被引：6
|
作者：
Wei, WS [1 ]
Wang, TM
Zhang, CX
Li, GH
Li, YX
机构：
[1] Beijing Univ Aeronaut & Astronaut, Sch Sci, Ctr Mat Phys & Chem, Sch Sci, Beijing 100083, Peoples R China
[2] Beijing Univ Aeronaut & Astronaut, Inst Optielect, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Natl Key Lab Semicond Superlattice & Microstruct, Beijing 100083, Peoples R China
来源：
VACUUM | 2003年 / 71卷 / 04期
基金：
中国国家自然科学基金;
关键词：
nc-Si : H film; (p)nc-Si : H/(n)c-Si heterojunction; variable capacitance diode;
D O I：
10.1016/S0042-207X(03)00034-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/ (p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：465 / 469
页数：5
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