Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films

被引：18

作者：

Ali, Tarek ^{[1
]}

Lehninger, David ^{[1
]}

Lederer, Maximilian ^{[1
]}

Li, Songrui ^{[1
]}

Kuhnel, Kati ^{[1
]}

Mart, Clemens ^{[1
]}

Mertens, Konstantin ^{[1
]}

Hoffmann, Raik ^{[1
]}

Olivo, Ricardo ^{[1
]}

Emara, Jennifer ^{[1
]}

Biedermann, Kati ^{[1
]}

Metzger, Joachim ^{[2
]}

Binder, Robert ^{[2
]}

Czernohorsky, Malte ^{[1
]}

Kampfe, Thomas ^{[1
]}

Muller, Johannes ^{[2
]}

Seidel, Konrad ^{[1
]}

Eng, Lukas M. ^{[3
,4
]}

机构：

[1] Fraunhofer IPMS, Ctr Nanoelect Technol CNT, Konigsbrucker Str 178, D-01099 Dresden, Germany

[2] GLOBALFOUNDRIES Fab1 LLC & Co KG, Wilschdorfer Land Str 101, D-01109 Dresden, Germany

[3] Tech Univ Dresden, Inst Angew Phys, Nothnitzer Str 61, D-01187 Dresden, Germany

[4] Tech Univ Dresden, Ctr Excellence Complex & Topol Quantum Matter Ct, D-01062 Dresden, Germany

来源：

ADVANCED ELECTRONIC MATERIALS | 2022年 / 8卷 / 05期

关键词：

antiferroelectric; field effect transistor; ferroelectric; FRAM; hafnium oxide; laminates; DOPED HAFNIUM OXIDE;

D O I：

10.1002/aelm.202100837

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The properties of hybrid ferroelectric (FE) and antiFE (AFE) films integrated in a single capacitor stack is reported. The stack lamination (4 x 5 nm) or (2 x 10 nm) using an Alumina (Al2O3) interlayer, material type (Si-doped HfO2 (HSO) and Zr doped HfO2 (HZO)), precursor condition (TEMA-Hf and Hf/ZrCl4), or dopant concentration (Si and Zr) are investigated for laminate stack properties. Optimized FE properties (higher 2P(r) and a lower fraction of the monoclinic phase) are observed at (2 x 10 nm) laminates compared to a single 20 nm film thickness. The hybrid laminate stack as FE-FE, AFE-FE, DE-FE, or DE-AFE using (2 x 10 nm) based laminates are explored in terms of the output FE hysteresis (2P(r), 2E(c)) and structural properties by X-ray diffraction. The hybrid AFE-FE stack shows the potential of tailoring the output FE hysteresis 2E(c) by varying the fraction of the AFE phase. The hybrid AFE-FE stack is studied for the HSO and HZO materials at optimal FE content for the first laminate layer while varying the Si or Zr content to stabilize different degrees of an AFE phase in the second laminate layer. The superposition of the hybrid AFE-FE hysteresis shows a systematic 2E(c) control. A model is developed to describe the tailored output FE hysteresis via the tuning of a hybrid AFE-FE stack. The role of stack lamination at hybrid-stabilized phases inside a single stack is explored with the aim for a controlled and optimized FE hysteresis shape toward a low power (2E(c)) operation.

引用

页数：10

共 23 条

[21] Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material [J].

Schroeder, Uwe ;

Richter, Claudia ;

Park, Min Hyuk ;

Schenk, Tony ;

Pesic, Milan ;

Hoffmann, Michael ;

Fengler, Franz P. G. ;

Pohl, Darius ;

Rellinghaus, Bernd ;

Zhou, Chuanzhen ;

Chung, Ching-Chang ;

Jones, Jacob L. ;

Mikolajick, Thomas .

INORGANIC CHEMISTRY, 2018, 57 (05) :2752-2765

[22]

Trentzsch M, 2016, INT EL DEVICES MEET

[23] Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films [J].

Yurchuk, Ekaterina ;

Mueller, Johannes ;

Knebel, Steve ;

Sundqvist, Jonas ;

Graham, Andrew P. ;

Melde, Thomas ;

Schroeder, Uwe ;

Mikolajick, Thomas .

THIN SOLID FILMS, 2013, 533 :88-92

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