Zinc oxide family semiconductors for ultraviolet radiation emission - A cathodoluminescence study

被引:2
作者
Chaudhari, Ashok [1 ]
Cui, Xin [2 ]
Hoex, Bram [2 ]
Hyde, Lachlan [3 ]
Ironside, Charlie N. [4 ]
Jadwisienczak, Wojciech M. [5 ]
Kordesch, Martin E. [6 ]
Rahman, Faiz [5 ]
Vispute, R. D. [7 ]
机构
[1] SolarTectic LLC, 1065 Quaker Bridge Rd E, Croton, NY 10520 USA
[2] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
[3] Swinburne Univ Technol, Graphene Certificate Labs, Hawthorn, Vic 3122, Australia
[4] Curtin Univ, Dept Phys & Astron, Perth, WA, Australia
[5] Ohio Univ, Russ Coll Engn & Technol, Sch Elect Engn & Comp Sci, Athens, OH 45701 USA
[6] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
[7] Blue Wave Semicond Inc, 1450 S Rolling Rd,Suite 4064, Baltimore, MD 21227 USA
关键词
Cathodoluminescence; Impact ionization; UV emission; Wide band gap semiconductor; ZNO THIN-FILMS; ATOMIC LAYER; LUMINESCENCE; BAND; GROWTH; MG;
D O I
10.1016/j.materresbull.2022.111906
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Zinc oxide (ZnO) family semiconductors that include ZnO and various ternary and even quaternary semiconductors formed by the inclusion of suitable other elements to zinc and oxygen are potential candidates for making UV-emitting solid-state devices. This work is a study of the UV-emitting potential of ZnO and MgZnO through electron beam irradiation of various samples. In this work, we studied materials grown or deposited through different techniques in order to assess their suitability for use in UV-emitting devices. Our work throws light on which growth or deposition methods are more suitable for obtaining radiation emission-capable materials from this family of II-VI oxide semiconductors. We find that single crystal thin film material, produced through either metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD) appear to be the best, followed by hydrothermally-grown single crystals. In contrast, sputtered material appears unsuitable for making UV-emitting devices.
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页数:8
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