Growth of manganese oxide thin films by atomic layer deposition

被引：102
作者：
Nilsen, O [1 ]
Fjellvåg, H [1 ]
Kjekshus, A [1 ]
机构：
[1] Univ Oslo, Dept Chem, N-0315 Oslo, Norway
来源：
THIN SOLID FILMS | 2003年 / 444卷 / 1-2期
关键词：
manganese oxide; atomic layer deposition (ALD);
D O I：
10.1016/S0040-6090(03)01101-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of manganese oxide are made by the ALD (atomic layer deposition) technique using Mn(thd)(3) (Hthd=2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Pulse parameters for ALD-type growth are established and such growth can be achieved at deposition temperatures between 138 and 210 degreesC. Films have been deposited on both soda-lime glass and Si(100) single crystals. The electrical resistivities of as-deposited films grown on soda-lime glass are measured to be 0.3-3.2 Omega cm (linear four-point-probe measurements). (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：44 / 51
页数：8
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