Determination of the basic optical parameters of ZnSnN2

被引：49

作者：

Deng, Fuling ^{[1
,2
]}

Cao, Hongtao ^{[2
]}

Liang, Lingyan ^{[2
]}

Li, Jun ^{[2
]}

Gao, Junhua ^{[2
]}

Zhang, Hongliang ^{[2
]}

Qin, Ruifeng ^{[2
]}

Liu, Caichi ^{[1
]}

机构：

[1] Hebei Univ Technol HEBUT, Sch Mat Sci & Engn, Tianjin 300401, Peoples R China

[2] Chinese Acad Sci, NIMTE, Div Funct Mat & Nano Devices, Ningbo 315201, Zhejiang, Peoples R China

来源：

OPTICS LETTERS | 2015年 / 40卷 / 07期

基金：

中国国家自然科学基金;

关键词：

SOLAR-CELLS; THIN-FILMS; TEMPERATURE; GROWTH;

D O I：

10.1364/OL.40.001282

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Polycrystalline ZnSnN2 thin films were successfully prepared by DC magnetron sputtering at room temperature. Both the as-deposited and annealed films showed n-type conduction, with electron concentration varying between 1.6 x 10(18) and 2.3 x 10(17) cm(-3) and the maximummobility of 3.98 cm(2) V-1 s(-1). The basic optical parameters such as the refraction index, extinction coefficient, and absorption coefficient were precisely determined through the spectroscopic ellipsometry measurement and analysis. The optical bandgap of the ZnSnN2 films was calculated to around 1.9 eV, with the absorption coefficient greater than 104 cm(-1) at wavelengths less than 845 nm. The easy-fabricated ZnSnN2 possesses a sound absorption coefficient ranging from the ultraviolet through visible light and into the near-infrared, comparable to some typical photovoltaic materials such as GaAs, CdTe, and InP. (C) 2015 Optical Society of America

引用

页码：1282 / 1285

页数：4

共 29 条

[1] Thermal annealing effect on the optical properties of Ag10As30S60 thin film [J].

Abd-Elrahman, M. I. ;

Abdel-Latief, A. Y. ;

Khafagy, Rasha M. ;

Younis, Noha ;

Hafiz, M. M. .

SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2015, 137 :29-32

[2]

Baco S., 2012, J. Sci. Technol, V4, P61

[3]

Carlin J.F., 2013, Mineral Commodity Summaries 2013, P170

[4] THIN-FILM GALLIUM-ARSENIDE HOMOJUNCTION SOLAR-CELLS ON RECRYSTALLIZED GERMANIUM AND LARGE-GRAIN GERMANIUM SUBSTRATES [J].

CHU, SS ;

CHU, TL ;

HAN, YX .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :811-814

[5] Ellipsometry investigation of the effects of annealing temperature on the optical properties of indium tin oxide thin films studied by Drude-Lorentz model [J].

D'Elia, Stefano ;

Scaramuzza, Nicola ;

Ciuchi, Federica ;

Versace, Carlo ;

Strangi, Giuseppe ;

Bartolino, Roberto .

APPLIED SURFACE SCIENCE, 2009, 255 (16) :7203-7211

[6] Growth and characterization of kesterite Cu2ZnSn(SxSe1-x)4 crystals for photovoltaic applications [J].

Das, Sandip ;

Mandal, Krishna C. .

MATERIALS RESEARCH BULLETIN, 2014, 57 :135-139

[7] Indium segregation in InGaN quantum-well structures [J].

Duxbury, N ;

Bangert, U ;

Dawson, P ;

Thrush, EJ ;

Van der Stricht, W ;

Jacobs, K ;

Moerman, I .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1600-1602

[8] HIGH-PRESSURE SYNTHESIS OF NEW COMPOUNDS, ZNSIN2 AND ZNGEN2 WITH DISTORTED WURTZITE STRUCTURE [J].

ENDO, T ;

SATO, Y ;

TAKIZAWA, H ;

SHIMADA, M .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (07) :424-426

[9] Tetrahedrally coordinated disordered Cu2SnS3-Cu2ZnSnS4-ZnS alloys with tunable optical and electronic properties [J].

Erslev, Peter T. ;

Young, Matthew R. ;

Li, Jian V. ;

Siah, Sin Cheng ;

Chakraborty, Rupak ;

Du, Hui ;

Lad, Robert J. ;

Buonassisi, Tonio ;

Teeter, Glenn .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 129 :124-131

[10] Growth of ZnSnN2 by Molecular Beam Epitaxy [J].

Feldberg, N. ;

Aldous, J. D. ;

Stampe, P. A. ;

Kennedy, R. J. ;

Veal, T. D. ;

Durbin, S. M. .

JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (04) :884-888

← 1 2 3 →