Dynamic defect as nonradiative recombination center in semiconductors

被引：7

作者：

Bang, Junhyeok ^{[1
,5
]}

Meng, Sheng ^{[2
,3
]}

Zhang, S. B. ^{[4
]}

机构：

[1] Korea Basic Sci Inst, Spin Engn Phys Team, Daejeon 305806, South Korea

[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[4] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[5] Chungbuk Natl Univ, Dept Phys, Cheongju 28644, South Korea

来源：

PHYSICAL REVIEW B | 2019年 / 100卷 / 24期

基金：

新加坡国家研究基金会;

关键词：

DX CENTERS; PERSISTENT PHOTOCONDUCTIVITY; ELECTRONIC-STRUCTURE; GAAS; DONOR; TRANSITIONS; EFFICIENCY; SURFACES; MODEL;

D O I：

10.1103/PhysRevB.100.245208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a theory of nonradiative recombination (NRR) with an emphasis on the so far little-explored dynamic effect in the process. We show that it can significantly enhance the NRR rate over that of a static midgap level as suggested by the Shockley-Read-Hall theory, whereby offering an alternative explanation to the long-lasting discrepancy between theory and experiment for semiconductors. As an illustration, we show that dynamic NRR can take place at the DX center in Si-doped GaAs which, combined with a modified ABC model at high carrier-density limit, makes it possible to verify the theory directly by experiment.

引用

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页数：8

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