Dynamic defect as nonradiative recombination center in semiconductors

被引：7
作者：
Bang, Junhyeok [1 ,5 ]
Meng, Sheng [2 ,3 ]
Zhang, S. B. [4 ]
机构：
[1] Korea Basic Sci Inst, Spin Engn Phys Team, Daejeon 305806, South Korea
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[4] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[5] Chungbuk Natl Univ, Dept Phys, Cheongju 28644, South Korea
来源：
PHYSICAL REVIEW B | 2019年 / 100卷 / 24期
基金：
新加坡国家研究基金会;
关键词：
DX CENTERS; PERSISTENT PHOTOCONDUCTIVITY; ELECTRONIC-STRUCTURE; GAAS; DONOR; TRANSITIONS; EFFICIENCY; SURFACES; MODEL;
D O I：
10.1103/PhysRevB.100.245208
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a theory of nonradiative recombination (NRR) with an emphasis on the so far little-explored dynamic effect in the process. We show that it can significantly enhance the NRR rate over that of a static midgap level as suggested by the Shockley-Read-Hall theory, whereby offering an alternative explanation to the long-lasting discrepancy between theory and experiment for semiconductors. As an illustration, we show that dynamic NRR can take place at the DX center in Si-doped GaAs which, combined with a modified ABC model at high carrier-density limit, makes it possible to verify the theory directly by experiment.
引用
收藏
页数：8
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