An evaluation of the growth of nitrides on semipolar substrates using two indicators

被引：8

作者：

Gil, Bernard ^{[1
]}

Bigenwald, Pierre

Briot, Olivier

机构：

[1] Univ Montpellier 2, Grp Etude Semicond, F-34095 Montpellier, France

[2] Univ Blaise Pascal, F-63177 Aubiere, France

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2007年 / 1卷 / 06期

关键词：

D O I：

10.1002/pssr.200701208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We evaluate the properties of nitride heterostructures on semipolar substrates using two indicators: the cancellation of the Quantum Confined Stark Effect and the volume density of elastic energy stored in the strained layers of GaN-GaInN heterostructures lattice-matched to (hkl)-oriented GaN semipolar substrates. These two parameters indicate that the growth on specific orientations is a plus when compared to growth on (0001) polar substrates. We will show that, unfortunately, one cannot simultaneously minimize the stored elastic energy and cancel the Quantum Confined Stark Effect, but it is possible to significantly reduce both of them. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：268 / 270

页数：3

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