Surface modification of n-GaAs by 50 MeV silicon ions

被引：6

作者：

Hullavarad, SS ^{[1
]}

Railkar, TA ^{[1
]}

Bhoraskar, SV ^{[1
]}

Madukumar, P ^{[1
]}

Gokama, AS ^{[1
]}

Bhoraskar, VN ^{[1
]}

Badrinarayanan, S ^{[1
]}

Pawaskar, NR ^{[1
]}

机构：

[1] Univ Poona, Dept Phys, Ctr Adv Studies Mat Sci & Solid State Phys, Poona 411007, Maharashtra, India

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 04期

关键词：

D O I：

10.1063/1.366922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An effective passivation of the surface states in n-GaAs has been achieved by high energy (50 MeV) silicon ion irradiation at a fluence of 1 x 10(13) ions cm(-2). The effect of passivation on the nature of defects has been studied by the technique of thermally stimulated exoelectron emission (TSEE) measurements. Consequently an enhancement in the intensity of the band edge, photoluminescence (PL) has also been noticed. The results of TSEE and PL measurements are augmented by surface analysis using x-ray photoelectron spectroscopy. An effective migration of silicon was observed from the buried layer towards the surface by radiation enhanced outdiffusion process. A stable passivating layer of silicon dioxide was found on GaAs surface which has been accounted for the enhancement in the PL intensity. (C) 1998 American Institute of Physics.

引用

页码：1962 / 1966

页数：5

共 22 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].