p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations

被引：86
作者：
Lu, JG [1 ]
Zhang, YZ [1 ]
Ye, ZZ [1 ]
Wang, L [1 ]
Zhao, BH [1 ]
Huang, JY [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
MATERIALS LETTERS | 2003年 / 57卷 / 22-23期
基金：
中国国家自然科学基金;
关键词：
semiconductors; epitaxial growth; zinc oxide films; DC magnetron reactive sputtering; crystal structure; p-type conduction;
D O I：
10.1016/S0167-577X(03)00054-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Films were prepared on alpha-Al2O3 (0001) substrates by DC reactive magnetron sputtering in NH3-O-2 ambient at different ammonia concentrations (from 0% to 100%). Results showed that N-doped, p-type ZnO films with c-axis orientation were achieved at the ammonia concentrations of 25%, 50% and 75%. The carrier density was typically 10(17) cm(-3), the resistivity was around 30 Omega cm and the transmittance was about 90% in visible region. At 0% ammonia concentration, intrinsic ZnO films with c-axis orientation were obtained. At 100% ammonia concentration, however, the films deposited are zinc polycrystal films. (C) 2003 Elsevier Science B.V All rights reserved.
引用
收藏
页码：3311 / 3314
页数：4
相关论文
共 15 条
  • [1] Optically pumped lasing of ZnO at room temperature
    Bagnall, DM
    Chen, YF
    Zhu, Z
    Yao, T
    Koyama, S
    Shen, MY
    Goto, T
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2230 - 2232
  • [2] Optical properties of zinc oxynitride thin films
    Futsuhara, M
    Yoshioka, K
    Takai, O
    [J]. THIN SOLID FILMS, 1998, 317 (1-2) : 322 - 325
  • [3] Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source
    Guo, XL
    Tabata, H
    Kawai, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) : 135 - 139
  • [4] ELECTRONIC-PROPERTIES OF VAPOR-GROWN HETEROEPITAXIAL ZNO FILM ON SAPPHIRE
    KASUGA, M
    OGAWA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05): : 794 - 798
  • [5] Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices
    Kim, H
    Gilmore, CM
    Horwitz, JS
    Piqué, A
    Murata, H
    Kushto, GP
    Schlaf, R
    Kafafi, ZH
    Chrisey, DB
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (03) : 259 - 261
  • [6] DEEP ENERGY-LEVELS OF DEFECTS IN THE WURTZITE SEMICONDUCTORS ALN, CDS, CDSE, ZNS, AND ZNO
    KOBAYASHI, A
    SANKEY, OF
    DOW, JD
    [J]. PHYSICAL REVIEW B, 1983, 28 (02): : 946 - 956
  • [7] Li Jianguang, 1996, Chinese Journal of Semiconductors, V17, P877
  • [8] Preparation and properties of N-doped p-type ZnO films by solid-source chemical vapour deposition with the c-axis parallel to the substrate
    Lü, JG
    Ye, ZZ
    Wang, L
    Zhao, BH
    Huang, JY
    [J]. CHINESE PHYSICS LETTERS, 2002, 19 (10) : 1494 - 1497
  • [9] Growth of p-type zinc oxide films by chemical vapor deposition
    Minegishi, K
    Koiwai, Y
    Kikuchi, Y
    Yano, K
    Kasuga, M
    Shimizu, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11A): : L1453 - L1455
  • [10] Influence of the post-treatment on the properties of ZnO thin films
    Nunes, P
    Fortunato, E
    Martins, R
    [J]. THIN SOLID FILMS, 2001, 383 (1-2) : 277 - 280
12