p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations

被引:86
作者
Lu, JG [1 ]
Zhang, YZ [1 ]
Ye, ZZ [1 ]
Wang, L [1 ]
Zhao, BH [1 ]
Huang, JY [1 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
semiconductors; epitaxial growth; zinc oxide films; DC magnetron reactive sputtering; crystal structure; p-type conduction;
D O I
10.1016/S0167-577X(03)00054-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Films were prepared on alpha-Al2O3 (0001) substrates by DC reactive magnetron sputtering in NH3-O-2 ambient at different ammonia concentrations (from 0% to 100%). Results showed that N-doped, p-type ZnO films with c-axis orientation were achieved at the ammonia concentrations of 25%, 50% and 75%. The carrier density was typically 10(17) cm(-3), the resistivity was around 30 Omega cm and the transmittance was about 90% in visible region. At 0% ammonia concentration, intrinsic ZnO films with c-axis orientation were obtained. At 100% ammonia concentration, however, the films deposited are zinc polycrystal films. (C) 2003 Elsevier Science B.V All rights reserved.
引用
收藏
页码:3311 / 3314
页数:4
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