Low-damage sputtering of GaAs and GaP using size-selected Ar cluster ion beams

被引：11
作者：
Nagano, M
Yamada, S
Akita, S
Houzumi, S
Toyoda, N
Yamada, I
机构：
[1] CRIEPI, Mat Sci Res Lab, Tokyo 2018511, Japan
[2] Univ Hyogo, Lab Adv Sci & Technol Ind, Ako, Hyogo 6781205, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期
关键词：
GCIB; CL; GaAs; GaP; sputtering yield; irradiation damage depth; low damage;
D O I：
10.1143/JJAP.44.L164
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the irradiation damage depths produced by an Ar gas cluster ion beam (GCIB) and an Ar monomer ion beam (MIB) on GaAs and Gap, in a comparison of the cathode luminescence (CL) spectra of ion-irradiated and nonirradiated areas. The depths of irradiation damage in both substrates were estimated from the relationship between the CL intensity and the electron beam acceleration voltage.
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页码：L164 / L166
页数：3
相关论文
共 8 条
[1]  
Nagano M, 2004, MATER RES SOC SYMP P, V792, P207
[2]   ELECTRON FOCUSING WITH MULTIPARALLEL ONE-DIMENSIONAL CHANNELS MADE BY FOCUSED ION-BEAM [J].
NAKAMURA, K ;
TSUI, DC ;
NIHEY, F ;
TOYOSHIMA, H ;
ITOH, T .
APPLIED PHYSICS LETTERS, 1990, 56 (04) :385-387
[3]   LOCALIZED 2-DIMENSIONAL ELECTRON-GAS FORMATION BY FOCUSED SI ION-BEAM IMPLANTATION INTO GAAS ALGAAS HETEROSTRUCTURES [J].
SASA, S ;
MILLER, MS ;
LI, YJ ;
XU, Z ;
ENSSLIN, K ;
PETROFF, PM .
APPLIED PHYSICS LETTERS, 1990, 57 (21) :2259-2261
[4]  
Toyoda N, 2004, MATER RES SOC SYMP P, V792, P623
[5]  
Yacobi B. G., 1990, CATHODOLUMINESCENCE
[6]   Materials processing by gas cluster ion beams [J].
Yamada, I ;
Matsuo, J ;
Toyoda, N ;
Kirkpatrick, A .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2001, 34 (06) :231-295
[7]   SURFACE MODIFICATION WITH GAS CLUSTER ION-BEAMS [J].
YAMADA, I ;
BROWN, WL ;
NORHBY, JA ;
SOSNOWSKI, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 79 (1-4) :223-226
[8]  
Yamada I, 1997, MATER RES SOC SYMP P, V438, P363
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