Low-damage sputtering of GaAs and GaP using size-selected Ar cluster ion beams

被引：11

作者：

Nagano, M

Yamada, S

Akita, S

Houzumi, S

Toyoda, N

Yamada, I

机构：

[1] CRIEPI, Mat Sci Res Lab, Tokyo 2018511, Japan

[2] Univ Hyogo, Lab Adv Sci & Technol Ind, Ako, Hyogo 6781205, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期

关键词：

GCIB; CL; GaAs; GaP; sputtering yield; irradiation damage depth; low damage;

D O I：

10.1143/JJAP.44.L164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the irradiation damage depths produced by an Ar gas cluster ion beam (GCIB) and an Ar monomer ion beam (MIB) on GaAs and Gap, in a comparison of the cathode luminescence (CL) spectra of ion-irradiated and nonirradiated areas. The depths of irradiation damage in both substrates were estimated from the relationship between the CL intensity and the electron beam acceleration voltage.

引用

页码：L164 / L166

页数：3

共 8 条

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