Enhanced spin-polarization lifetimes in a two-dimensional electron gas in a gate-controlled GaAs quantum well

被引：14

作者：

Anghel, Sergiu ^{[1
]}

Singh, Akshay ^{[2
,3
]}

Passmann, Felix ^{[1
]}

Iwata, Hikaru ^{[4
]}

Moore, John N. ^{[4
]}

Yusa, Go ^{[4
]}

Li, Xiaoqin ^{[2
,3
,5
]}

Betz, Markus ^{[1
]}

机构：

[1] Tech Univ Dortmund, Expt Phys 2, Otto Hahn Str 4a, D-44227 Dortmund, Germany

[2] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[3] Univ Texas Austin, CQS, Austin, TX 78712 USA

[4] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

[5] Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 USA

来源：

PHYSICAL REVIEW B | 2016年 / 94卷 / 03期

基金：

美国国家科学基金会;

关键词：

NEGATIVELY CHARGED EXCITONS; DYNAMICS; RELAXATION; BEATS; HOLE;

D O I：

10.1103/PhysRevB.94.035303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton, trion, and electron spin dynamics in a 20-nm-wide modulation-doped GaAs single quantum well are investigated using resonant ultrafast two-color Kerr rotation spectroscopy. Excitons and trions are selectively detected by resonant probe pulses while their relative spectral weight is controlled by adjusting the gate voltage which tunes the carrier density. Tuning the carrier density markedly influences the spin decay time of the two-dimensional electron gas. The spin decay time can be enhanced by a factor of 3 at an intermediate carrier concentration in the quantum well where excitons and trions coexist in the system. In addition, we explore the capability to tune the g factor of the electron gas via the carrier density.

引用

页数：6

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