Determination of the geometric corrugation of graphene on SiC(0001) by grazing incidence fast atom diffraction

被引:32
作者
Zugarramurdi, A. [1 ]
Debiossac, M. [1 ]
Lunca-Popa, P. [1 ]
Mayne, A. J. [1 ]
Momeni, A. [1 ,2 ]
Borisov, A. G. [1 ]
Mu, Z. [1 ]
Roncin, P. [1 ]
Khemliche, H. [1 ]
机构
[1] Univ Paris 11, CNRS, ISMO, UMR 8214, F-91405 Orsay, France
[2] Univ Cergy Pontoise, F-95031 Cergy, France
关键词
Geometry - Silicon carbide - Diffraction;
D O I
10.1063/1.4914178
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a grazing incidence fast atom diffraction ( GIFAD) study of monolayer graphene on 6H-SiC( 0001). This system shows a Moire-like 13 x 13 superlattice above the reconstructed carbon buffer layer. The averaging property of GIFAD results in electronic and geometric corrugations that are well decoupled; the graphene honeycomb corrugation is only observed with the incident beam parallel to the zigzag direction while the geometric corrugation arising from the superlattice is revealed along the armchair direction. Full-quantum calculations of the diffraction patterns show the very high GIFAD sensitivity to the amplitude of the surface corrugation. The best agreement between the calculated and measured diffraction intensities yields a corrugation height of 0.27 +/- 0.03 angstrom. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 30 条
[1]   Atomic scale oxidation of a complex system:: O2/α-SiC(0001)-(3x3) [J].
Amy, F ;
Enriquez, H ;
Soukiassian, P ;
Storino, PF ;
Chabal, YJ ;
Mayne, AJ ;
Dujardin, G ;
Hwu, YK ;
Brylinski, C .
PHYSICAL REVIEW LETTERS, 2001, 86 (19) :4342-4345
[2]   Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs [J].
Atkinson, P. ;
Eddrief, M. ;
Etgens, V. H. ;
Khemliche, H. ;
Debiossac, M. ;
Momeni, A. ;
Mulier, M. ;
Lalmi, B. ;
Roncin, P. .
APPLIED PHYSICS LETTERS, 2014, 105 (02)
[3]   State selective electron transport through electronic surface states of 6H-SiC(0001)-3 x 3 [J].
Baffou, G. ;
Mayne, A. J. ;
Comtet, G. ;
Dujardin, G. .
PHYSICAL REVIEW B, 2008, 77 (16)
[4]   Electronic and geometric corrugation of periodically rippled, self-nanostructured graphene epitaxially grown on Ru(0001) [J].
Borca, Bogdana ;
Barja, Sara ;
Garnica, Manuela ;
Minniti, Marina ;
Politano, Antonio ;
Rodriguez-Garcia, Josefa M. ;
Hinarejos, Juan Jose ;
Farias, Daniel ;
Vazquez de Parga, Amadeo L. ;
Miranda, Rodolfo .
NEW JOURNAL OF PHYSICS, 2010, 12
[5]   Enhancement of Chemical Activity in Corrugated Graphene [J].
Boukhvalov, Danil W. ;
Katsnelson, Mikhail I. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (32) :14176-14178
[6]   INTERACTION BETWEEN A HE ATOM AND A GRAPHITE SURFACE [J].
CARLOS, WE ;
COLE, MW .
SURFACE SCIENCE, 1980, 91 (01) :339-357
[7]   Combined experimental and theoretical study of fast atom diffraction on the β2(2x4) reconstructed GaAs(001) surface [J].
Debiossac, M. ;
Zugarramurdi, A. ;
Khemliche, H. ;
Roncin, P. ;
Borisov, A. G. ;
Momeni, A. ;
Atkinson, P. ;
Eddrief, M. ;
Finocchi, F. ;
Etgens, V. H. .
PHYSICAL REVIEW B, 2014, 90 (15)
[8]   Transient Quantum Trapping of Fast Atoms at Surfaces [J].
Debiossac, M. ;
Zugarramurdi, A. ;
Lunca-Popa, P. ;
Momeni, A. ;
Khemliche, H. ;
Borisov, A. G. ;
Roncin, P. .
PHYSICAL REVIEW LETTERS, 2014, 112 (02)
[9]   Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene [J].
Goler, Sarah ;
Coletti, Camilla ;
Piazza, Vincenzo ;
Pingue, Pasqualantonio ;
Colangelo, Francesco ;
Pellegrini, Vittorio ;
Emtsev, Konstantin V. ;
Forti, Stiven ;
Starke, Ulrich ;
Beltram, Fabio ;
Heun, Stefan .
CARBON, 2013, 51 :249-254
[10]   The growth and morphology of epitaxial multilayer graphene [J].
Hass, J. ;
de Heer, W. A. ;
Conrad, E. H. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (32)