Electronic devices - Single electrons in silicon drops

被引：4

作者：

Glattli, DC ^{[1
]}

机构：

[1] CEA Saclay, Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France

来源：

NATURE | 1998年 / 393卷 / 6685期

关键词：

D O I：

10.1038/31099

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

At the current rate of miniaturization, metal-oxide field-effect transistors (MOSFETs) — the basic unit of modern computers — will run against fundamental limitations around the year 2015. A way around this limit might be found in a new type of field-effect transistor, called a single-electron transistor (SET), which takes advantage of quantum-mechanical effects. But only now has a SET been made that works at room temperature.

引用

页码：516 / 517

页数：2

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