Optical study of interactions of hydrogen with dislocations in CdTe

被引:6
作者
Guergouri, K [1 ]
Brihi, N
Marfaing, Y
Triboulet, R
机构
[1] Univ Mentouri, Dept Phys, Lab Physichim Semiconducteurs, Constantine 25000, Algeria
[2] CNRS, Lab Phys Solides & Cristallogenese, F-92195 Meudon, France
关键词
impurities; metalorganic vapor phase epitaxy; oxides; zinc compounds; semiconducting II-VI materials; NEUTRALIZATION; ACCEPTOR;
D O I
10.1016/S0022-0248(03)01351-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The effect of hydrogenation on defects associated with dislocations has been studied in n-type CdTe crystals with the help of cathodoluminescence imaging and photoluminescence spectra. Dislocations were introduced by performing indentations on the Cd(1 1 1) and Te(1 1 1) crystal faces using a Vickers microhardness apparatus. Hydrogenation was achieved by annealing the samples in closed ampoules at 500degreesC for 70 h under deuterium atmosphere at a pressure of 700 mbar. Cathodoluminescence images of hydrogenated samples show a removal of the long arms of the indentation rosette on Te face and short arms on Cd face. This is accounted for in terms of the formation of TeH2-Iike volatile entities as Te atoms are involved in both cases. Photoluminescence spectra indicate that the general effect of plastic deformation is to create acceptor centres related to mobile impurities (Cu) and to Cd vacancies. Those acceptors may be passivated by formation of neutral complexes with deuterium. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:230 / 236
页数:7
相关论文
共 10 条
[1]  
BIGLARI B, 1990, THESIS U L P STRASBO
[2]   PROPERTIES OF NITROGEN ACCEPTOR IN CDTE - ENERGY-SPECTRUM AND INTERACTION WITH HYDROGEN [J].
BOUDOUKHA, A ;
LEGROS, R ;
SVOB, L ;
MARFAING, Y .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :226-231
[3]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[4]   Study of the effect of dislocations introduced by indentation on Cd(111) and Te((1)over-bar (1)over-bar (1)over-bar) faces on the electrical and optical properties of CdTe [J].
Guergouri, K ;
Brihi, N ;
Triboulet, R .
JOURNAL OF CRYSTAL GROWTH, 2000, 209 (04) :709-715
[5]  
Gurumurthy S, 1996, APPL PHYS LETT, V68, P2424, DOI 10.1063/1.116155
[6]  
GURUMURTHY S, 1994, MATTER SCI, V17, P1057
[7]   MECHANICAL-BEHAVIOR OF CDTE [J].
GUTMANAS, EY ;
TRAVITZKY, N ;
PLITT, U ;
HAASEN, P .
SCRIPTA METALLURGICA, 1979, 13 (04) :293-297
[8]   Hydrogen-arsenic interactions in MOVPE-grown CdTe: Effects of rapid thermal annealing [J].
Svob, L ;
Marfaing, Y ;
Clerjaud, B ;
Cote, D ;
Lebkiri, A ;
Druilhe, R .
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :72-75
[9]   NEUTRALIZATION OF ACCEPTOR AND DONOR IMPURITIES IN HYDROGENATED CDTE [J].
SVOB, L ;
HEURTEL, A ;
MARFAING, Y .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :815-818
[10]  
WALDROP JR, 1948, J VAC SCI TECHNOL B, V2, P443