Zinc oxide sheet field-effect transistors

被引：24

作者：

Dahiya, A. S. ^{[1
]}

Opoku, C. ^{[1
]}

Oshman, C. ^{[1
,2
]}

Poulin-Vittrant, G. ^{[2
]}

Cayrel, F. ^{[1
]}

Hue, L. -P. Tran Huu ^{[2
]}

Alquier, D. ^{[1
]}

Camara, N. ^{[1
]}

机构：

[1] Univ Tours, CNRS, GREMAN UMR 7347, F-37071 Tours, France

[2] Univ Tours, INSA CVL, CNRS, GREMAN UMR 7347, F-41034 Blois, France

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 03期

关键词：

ZNO NANOSHEETS; ELECTRON-MOBILITY;

D O I：

10.1063/1.4927270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present work investigates charge carrier transport in back-gated field-effect transistors based on ZnO sheets (BG ZS-FETs). The ZSs used in this work have been synthesized via the catalytic-assisted vapor-liquid-solid process inside a horizontal quartz tube furnace at around 950 degrees C. The BG ZS-FETs were constructed as bottom-gate top-contact structures using suspended and nonsuspended ZS as the active channel material. Assessment of key device performance metrics revealed excellent n-channel behavior with low off-state current in the femtoamp range, high onstate current (similar to 2 mu A/mu m), high on-to-off current ratio (>10(7)), a steep sub-threshold swing of around 190 mV/dec, and field-effect carrier mobility of around 60 cm(2)/Vs. Temperature dependent charge transport studies reveal excessive mobility degradation in the non-suspended device while the same parameter in the suspended case appeared fairly stable. The present work is envisaged to benefit ongoing research towards the development of high performance ZS-based thin-film transistors. (C) 2015 AIP Publishing LLC.

引用

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