Shallow donor centers in gallium nitrides

被引：5

作者：

Emtsev, VV ^{[1
]}

Davydov, VY ^{[1
]}

Emtsev, KV ^{[1
]}

Poloskin, DS ^{[1
]}

Oganesyan, GA ^{[1
]}

Kozlovskii, VV ^{[1
]}

Haller, EE ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

10TH INTERNATIONAL CONFERENCE ON SHALLOW LEVEL CENTERS IN SEMICONDUCTORS (SLCS-10), PROCEEDINGS | 2003年

关键词：

D O I：

10.1002/pssc.200306191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Production processes of electrically active defects in nominally undoped n-GaN irradiated with fast electrons are investigated. It has been demonstrated that the silicon impurity atoms with shallow donor states at E-c - 20 meV interact with native defects neither during irradiation nor annealing at elevated temperatures. Two major kinds of defects produced by irradiation in n-GaN are revealed: donor centers at E-c - 70 meV and deep acceptors centers. These defects were found to be unstable at T > 200 degreesC. They can be attributed to the vacancies on the nitrogen and gallium sublattices, respectively.

引用

页码：601 / 604

页数：4

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