Impact of Cell Layout on On-state and Dynamic Characteristics of N-channel SiC IGBTs

被引：3

作者：

Watanabe, Naoki ^{[1
]}

Okino, Hiroyuki ^{[1
]}

Shima, Akio ^{[1
]}

机构：

[1] Hitachi Ltd, Ctr Technol Innovat Electrificat, Res & Dev Grp, Tokyo 1858601, Japan

来源：

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年

关键词：

SiC; IGBT; Cell layout; Switching loss;

D O I：

10.1109/ISPSD49238.2022.9813599

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The conductivity-modulation enhancement of n-channel SiC insulated-gate bipolar transistors (IGBTs) with different device cell layouts has been investigated. By utilizing the box cell layout, the specific differential on-resistance was reduced by 35%, while the turn-off loss increased only slightly (up to 7 %). This implies that the box layout can effectively enhance the carrier concentration near the emitter region in the on-state. Also, SiC IGBTs fabricated with the box layout properly operated without latch-up phenomenon up to 300 A/cm(2) switching. SiC IGBTs can significantly reduce the on-voltage with only a small switching loss increase by utilizing the box layout.

引用

页码：85 / 88

页数：4