Impact of Cell Layout on On-state and Dynamic Characteristics of N-channel SiC IGBTs

被引：3
作者：
Watanabe, Naoki [1 ]
Okino, Hiroyuki [1 ]
Shima, Akio [1 ]
机构：
[1] Hitachi Ltd, Ctr Technol Innovat Electrificat, Res & Dev Grp, Tokyo 1858601, Japan
来源：
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年
关键词：
SiC; IGBT; Cell layout; Switching loss;
D O I：
10.1109/ISPSD49238.2022.9813599
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The conductivity-modulation enhancement of n-channel SiC insulated-gate bipolar transistors (IGBTs) with different device cell layouts has been investigated. By utilizing the box cell layout, the specific differential on-resistance was reduced by 35%, while the turn-off loss increased only slightly (up to 7 %). This implies that the box layout can effectively enhance the carrier concentration near the emitter region in the on-state. Also, SiC IGBTs fabricated with the box layout properly operated without latch-up phenomenon up to 300 A/cm(2) switching. SiC IGBTs can significantly reduce the on-voltage with only a small switching loss increase by utilizing the box layout.
引用
收藏
页码：85 / 88
页数：4
相关论文
共 21 条
  • [1] Power Loss Reduction of N-Channel 10-kV SiC IGBTs With Box Cell Layout
    Watanabe, Naoki
    Okino, Hiroyuki
    Shimizu, Haruka
    Shima, Akio
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (07) : 3768 - 3773
  • [2] Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage
    Yang, Xiaolei
    Tao, Yonghong
    Yang, Tongtong
    Huang, Runhua
    Song, Bai
    JOURNAL OF SEMICONDUCTORS, 2018, 39 (03)
  • [3] Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage
    Xiaolei Yang
    Yonghong Tao
    Tongtong Yang
    Runhua Huang
    Bai Song
    Journal of Semiconductors, 2018, (03) : 61 - 63
  • [4] Optimization of ON-state and switching performances for 15-20-kV 4H-SiC IGBTs
    Tamaki, Tomohiro
    Walden, Ginger G.
    Sui, Yang
    Cooper, James A.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1920 - 1927
  • [5] Effect of Dynamic Threshold-Voltage Instability on Dynamic on-State Resistance in SiC MOSFETs
    Lelis, Aivars J.
    Urciuoli, Damian P.
    Schroen, Erik S.
    Habersat, Daniel B.
    Green, Ronald, Jr.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (10) : 5649 - 5655
  • [6] Study of a 4H-SiC epitaxial n-channel MOSFET
    Tang Xiao-Yan
    Zhang Yu-Ming
    Zhang Yi-Men
    CHINESE PHYSICS B, 2010, 19 (04)
  • [7] Study of a 4H-SiC epitaxial n-channel MOSFET
    汤晓燕
    张玉明
    张义门
    Chinese Physics B, 2010, (04) : 364 - 366
  • [8] Simulation of high-voltage injection-enhanced 4H-SiC N-channel IGBTs with forward drop approaching that of a PiN junction rectifier
    Zhu, Lin
    Chow, T. Paul
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1401 - +
  • [9] On-State and Switching Performance of High-Voltage 15-20 kV 4H-SiC DMOSFETs and IGBTs
    Tamaki, T.
    Walden, G. G.
    Sui, Y.
    Cooper, J. A.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1143 - +
  • [10] Dynamic Behavior of a Medium-Voltage N-Channel SiC-IGBT With Ultrafast Switching Performance of 300 kV/μs
    Koseki, Kunio
    Yonezawa, Yoshiyuki
    Mizushima, Tomonori
    Matsunaga, Shinichiro
    Iizuka, Yuji
    Yamaguchi, Hiroshi
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2018, 54 (04) : 3558 - 3565
123