Impact of Cell Layout on On-state and Dynamic Characteristics of N-channel SiC IGBTs

被引：3
|
作者：
Watanabe, Naoki [1 ]
Okino, Hiroyuki [1 ]
Shima, Akio [1 ]
机构：
[1] Hitachi Ltd, Ctr Technol Innovat Electrificat, Res & Dev Grp, Tokyo 1858601, Japan
来源：
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年
关键词：
SiC; IGBT; Cell layout; Switching loss;
D O I：
10.1109/ISPSD49238.2022.9813599
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The conductivity-modulation enhancement of n-channel SiC insulated-gate bipolar transistors (IGBTs) with different device cell layouts has been investigated. By utilizing the box cell layout, the specific differential on-resistance was reduced by 35%, while the turn-off loss increased only slightly (up to 7 %). This implies that the box layout can effectively enhance the carrier concentration near the emitter region in the on-state. Also, SiC IGBTs fabricated with the box layout properly operated without latch-up phenomenon up to 300 A/cm(2) switching. SiC IGBTs can significantly reduce the on-voltage with only a small switching loss increase by utilizing the box layout.
引用
收藏
页码：85 / 88
页数：4
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