Synthesis and Characterization of In2S3 Thin Films Deposited by Chemical Bath Deposition on Polyethylene Naphthalate Substrates

被引：9
作者：
Castelo-Gonzalez, O. A. [1 ]
Santacruz-Ortega, H. C. [1 ]
Quevedo-Lopez, M. A. [1 ,2 ]
Sotelo-Lerma, M. [1 ]
机构：
[1] Univ Sonora, Dept Invest Polimeros & Mat, Blvd Luis Encinas & Rosales S-N, Hermosillo 83000, Sonora, Mexico
[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 04期
关键词：
Thin film; In2S3; infrared; XPS; flexible substrate; PEN; POLY(ETHYLENE 2,6-NAPHTHALATE); ORIENTATION; BEHAVIOR; GROWTH; LAYER;
D O I：
10.1007/s11664-011-1865-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Indium sulfide (In2S3) thin films were deposited on polyethylene naphthalate (PEN) by chemical bath deposition (CBD). The materials were characterized by ultraviolet (UV)-visible spectroscopy, x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), scanning electron microscopy (SEM), and x-ray diffraction (XRD) to investigate the influence of the polymeric substrate on the resulting thin In2S3. The films showed polycrystalline (cubic and tetragonal) structure. A reduction of the ordering of the polymeric chains at the surface of the PEN was also observed, demonstrated by the appearance of two infrared bands at 1094 cm(-1) and 1266 cm(-1). Presence of oxygen during the early stages of In2S3 growth was also identified. We propose a reaction mechanism for both the equilibrium and nucleation stages. These results demonstrate that In2S3 can be deposited at room temperature on a flexible substrate.
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收藏
页码：695 / 700
页数：6
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