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Combination of focused ion beam (FIB) and transmission electron microscopy (TEM) as sub-0.25 mu m defect characterization tool
被引：2
作者：
Doong, YY
Fu, JM
Hsieh, YF
机构：
来源：
PROCEEDINGS OF THE 1997 6TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
|
1997年
关键词：
D O I：
10.1109/IPFA.1997.638125
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
A sub-0.25 mu m defect characterization study was conducted by using in-line inspection machines to locate defects and focused ion beam system (FIB) equipped with a navigation tool(1-3) to generate cross-sectional transmission electron microscopy (TEM) samples(4-8). Two failure analysis cases regarding to invisible defects in optical microscope were reported in this work. One described the micro-trench formed at the bird's beak of field oxide, and the other one illustrated the etching pit formation during Poly-Si etching process.
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页码：80 / 85
页数：6
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