Improvement in Electron Overflow of Near-Ultraviolet InGaN LEDs by Specific Design on Last Barrier

被引：33

作者：

Kuo, Yen-Kuang ^{[1
]}

Shih, Ya-Hsuan ^{[2
]}

Tsai, Miao-Chan ^{[2
]}

Chang, Jih-Yuan ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 21期

关键词：

InGaN; light-emitting diodes; multiple quantum well; near-ultraviolet; LIGHT-EMITTING-DIODES; BOWING PARAMETER; BAND-GAP; POLARIZATION; ENHANCEMENT; PERFORMANCE; EFFICIENCY; POWER;

D O I：

10.1109/LPT.2011.2165838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Specific designs on the last barrier of near-ultraviolet InGaN light-emitting diodes are investigated numerically in order to diminish the electron leakage current without sacrificing the injection efficiency of holes. Due to the reduction of electron leakage current, the recombination of electrons and holes in the p-layers is decreased and, thus, more holes can be injected into the active region. The simulation results show that the optical performance and internal quantum efficiency are markedly improved when the last GaN barrier near the p-layers is partially replaced by In0.01Ga0.99N layer and intentionally p-doped.

引用

页码：1630 / 1632

页数：3

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