B-doping and annealing on the properties of B and Ga co-doped ZnO films

被引：16

作者：

Huang, Jian ^{[1
]}

Hu, Yan ^{[1
]}

Ma, Yuncheng ^{[1
]}

Li, Bing ^{[1
]}

Tang, Ke ^{[1
]}

Shi, Haozhi ^{[1
]}

Gou, Saifei ^{[1
]}

Zou, Tianyu ^{[1
]}

Wang, Linjun ^{[1
]}

Lu, Yicheng ^{[2
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China

[2] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

SURFACE & COATINGS TECHNOLOGY | 2019年 / 358卷

基金：

中国国家自然科学基金;

关键词：

ZnO; Magnetron sputtering; Annealing; Boron; SEMICONDUCTOR THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; SUBSTRATE-TEMPERATURE; POSTANNEALING TREATMENT; OXIDE; AL; TRANSPARENT; ALUMINUM; GROWTH;

D O I：

10.1016/j.surfcoat.2018.11.053

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent conducting boron (B) and gallium (Ga) co-doped ZnO (BGZO) films were deposited by radio frequency (RF) magnetron sputtering. The influence of B-doping and annealing treatment on properties of BGZO films was investigated. The results indicate that all samples have hexagonal wurtzite structure with (002) preferential orientation and the film crystallinity is improved with increasing annealing temperature. The hall mobility of films increases and the carrier concentration decreases with the increasing of annealing temperature. The films also show red shift of the optical bandgap with the increasing of annealing temperature. The incorporation of B increases the thermal stability of electrical properties of the BGZO film.

引用

页码：223 / 227

页数：5

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