Bulk-silicon power integrated circuit technology for 192-channel data driver ICs of plasma display panel

被引：0

作者：

Sun, W. ^{[1
]}

Li, H. ^{[1
]}

Yi, Y. ^{[1
]}

Wu, H. ^{[1
]}

Shi, L. ^{[1
]}

机构：

[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Jiangsu, Peoples R China

来源：

IET CIRCUITS DEVICES & SYSTEMS | 2008年 / 2卷 / 02期

关键词：

Integrated circuits;

D O I：

10.1049/iet-cds:20070279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 192-channel data driver IC for plasma display panel has been proposed using bulk-silicon CDMOS (CMOS and DMOS) technology. A novel latch-up protection structure and a novel high-voltage pLDMOS are used in the data driver IC, so as to avoid the latch-up during the system application and to reduce the process cost by more than 10% compared with the conventional one. The power consumption of the presented data driver IC with a novel level-shift circuit was reduced by >20% compared with the conventional one. The rise and the fall times of the output stage are similar to 80 and 104 ns, respectively.

引用

页码：277 / 280

页数：4

共 11 条

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