An investigation by spot profile analysis low energy electron diffraction of Si grown on GaAs(001)

被引：5

作者：

Levermann, AH ^{[1
]}

Woolf, DA ^{[1
]}

Westwood, DI ^{[1
]}

Macdonald, JE ^{[1
]}

机构：

[1] UNIV WALES COLL CARDIFF,DEPT PHYS & ASTRON,CARDIFF CF2 3YB,S GLAM,WALES

来源：

SURFACE SCIENCE | 1996年 / 352卷

关键词：

gallium arsenide; heterojunctions; low energy electron diffraction (LEED); molecular beam epitaxy; reflection high-energy electron diffraction (RHEED) semiconductor-semiconductor interfaces; silicon; single crystal surfaces;

D O I：

10.1016/0039-6028(95)01281-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present the first in-situ spot profile analysis low energy electron diffraction (SPA-LEED) study of the MBE growth of sub-monolayer coverages (0 to 1 ML) of Si on GaAs(001). Changes in the surface reconstructions from c(4 X 4) via mixed c(4 X 4)/(1 X 2), (1 X 2)/(2 X 1), (1 X 2)/asymmetric (3 X 1) and asymmetric (3 X 1) to a (3 X 1) structure with increasing Si coverage have been monitored. Results are subsequently compared with recent in-situ reflection high energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM) measurements. The continuous splitting between the 1/3- and 2/3-order diffraction spots up to the completion of the symmetric (3 X 1) reconstruction has been examined in detail. Domain sizes for each reconstruction have been quantified from the spot profiles.

引用

页码：812 / 816

页数：5

共 21 条

[1] REAPPRAISAL OF SI-INTERLAYER-INDUCED CHANGE OF BAND DISCONTINUITY AS GAAS-ALAS HETEROINTERFACE TAKING ACCOUNT OF DELTA-DOPING [J].

AKAZAWA, M ;

HASEGAWA, H ;

TOMOZAWA, H ;

FUJIKURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (8A) :L1012-L1014

[2] THE LATTICE LOCATIONS OF SILICON ATOMS IN DELTA-DOPED LAYERS IN GAAS [J].

ASHWIN, MJ ;

FAHY, M ;

HARRIS, JJ ;

NEWMAN, RC ;

SANSOM, DA ;

ADDINALL, R ;

MCPHAIL, DS ;

SHARMA, VKM .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) :633-639

[3] A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING [J].

AVERY, AR ;

HOLMES, DM ;

SUDIJONO, JL ;

JONES, TS ;

FAHY, MR ;

JOYCE, BA .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :202-208

[4] NUCLEATION, RELAXATION AND REDISTRIBUTION OF SI LAYERS IN GAAS [J].

BRANDT, O ;

CROOK, G ;

PLOOG, K ;

BIERWOLF, R ;

HOHENSTEIN, M ;

MAIER, M ;

WAGNER, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (1A-B) :L24-L27

[5] CHEMISORPTION AND CATALYTIC REACTIONS OF OXYGEN AND CARBON MONOXIDE ON A PALLADIUM(110) SURFACE [J].

ERTL, G ;

RAU, P .

SURFACE SCIENCE, 1969, 15 (03) :443-&

[6] MONTE-CARLO TREATMENT OF ARRANGED ADSOPRTION PHASES [J].

ERTL, G ;

KUPPERS, J .

SURFACE SCIENCE, 1970, 21 (01) :61-&

[7]

Ertl G., 1985, Low Energy Electrons and Surface Chemistry Weinheim, P77

[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF THE GAASSIGAAS SYSTEM [J].

FAHY, MR ;

ASHWIN, MJ ;

HARRIS, JJ ;

NEWMAN, RC ;

JOYCE, BA .

APPLIED PHYSICS LETTERS, 1992, 61 (15) :1805-1807

[9] DELTA-DOPING OF GAAS AND AL0.33GA0.67AS WITH SN, SI AND BE - A COMPARATIVE-STUDY [J].

HARRIS, JJ ;

CLEGG, JB ;

BEALL, RB ;

CASTAGNE, J ;

WOODBRIDGE, K ;

ROBERTS, C .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :239-245

[10] X-RAY CHARACTERIZATION OF SI DELTA-DOPING IN GAAS [J].

HART, L ;

FAHY, MR ;

NEWMAN, RC ;

FEWSTER, PF .

APPLIED PHYSICS LETTERS, 1993, 62 (18) :2218-2220

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