A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

被引：1

作者：

Emelyanov, E. A. ^{[1
]}

Nastovjak, A. G. ^{[1
]}

Petrushkov, M. O. ^{[1
]}

Esin, M. Yu. ^{[1
]}

Gavrilova, T. A. ^{[1
]}

Putyato, M. A. ^{[1
]}

Schwartz, N. L. ^{[1
,2
]}

Shvets, V. A. ^{[1
,3
]}

Vasev, A. V. ^{[1
]}

Semyagin, B. R. ^{[1
]}

Preobrazhenskii, V. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia

[3] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2020年 / 46卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

molecular beam epitaxy; nanowires; ellipsometry; atomic force microscopy; scanning electronic microscopy; GAAS NANOWIRES;

D O I：

10.1134/S1063785020020194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs nanowires (NWs) were generated on the surface of GaAs(111)B and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE) method. Silicon was oxidized in purified air without moving the structures out of the vacuum system of the MBE apparatus. The process of Si/GaAs heterostructure oxidation was investigated using single-wave and spectral ellipsometry. The oxidized silicon surface morphology was studied by the atomic force microscopy methods. The scanning electronic microscopy method was used to examine the samples with NWs. The NW density was about 2.6 x 10(7) and 3 x 10(7) cm(-2) for (111)B and (100), respectively.

引用

页码：161 / 164

页数：4

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