MBE growth of GaP on a Si substrate

被引：18

作者：

Sobolev, M. S. ^{[1
]}

Lazarenko, A. A. ^{[1
]}

Nikitina, E. V. ^{[1
]}

Pirogov, E. V. ^{[1
]}

Gudovskikh, A. S. ^{[1
]}

Egorov, A. Yu ^{[1
]}

机构：

[1] Russian Acad Sci, St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 04期

关键词：

MOLECULAR-BEAM EPITAXY;

D O I：

10.1134/S1063782615040235

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the "migration-enhanced epitaxy" procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.

引用

页码：559 / 562

页数：4

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