MBE growth of GaP on a Si substrate

被引：18

作者：

Sobolev, M. S. ^{[1
]}

Lazarenko, A. A. ^{[1
]}

Nikitina, E. V. ^{[1
]}

Pirogov, E. V. ^{[1
]}

Gudovskikh, A. S. ^{[1
]}

Egorov, A. Yu ^{[1
]}

机构：

[1] Russian Acad Sci, St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 04期

关键词：

MOLECULAR-BEAM EPITAXY;

D O I：

10.1134/S1063782615040235

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the "migration-enhanced epitaxy" procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.

引用

页码：559 / 562

页数：4

共 50 条

[21] Growth of MnSi1.7 on Si(001) by MBE
Teichert, S
Schwendler, S
Sarkar, DK
Mogilatenko, A
Falke, M
Beddies, G
Kleint, C
Hinneberg, HJ
JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 882 - 887
[22] Structure and optical properties of Ge/Si superlattice grown at Si substrate by MBE at different temperatures
Zakharov, ND
Werner, P
Gösele, U
Gerth, G
Cirlin, G
Egorov, VA
Volovik, BV
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 87 (01): : 92 - 95
[23] DEPENDENCE OF THE CARRIER CONCENTRATION PROFILE AT THE SI-MBE LAYER P-SI SUBSTRATE INTERFACE ON THE SI-SUBSTRATE PREPARATION METHOD
KANAYA, H
SHIGEKAWA, H
HASEGAWA, F
YAMAKA, E
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02): : L195 - L197
[24] SUBSTRATE MISORIENTATION EFFECT ON BE TRANSPORT DURING MBE GROWTH OF GAAS
MOCHIZUKI, K
GOTO, S
KAKIBAYASHI, H
KUSANO, C
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (07): : 1235 - 1239
[25] MBE growth and electrical properties of InSb film on GaAs substrate
Zhang, Y. H.
Chen, P. P.
Lin, T.
Xia, H.
Li, T. X.
SEVENTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2011, 7995
[26] The influence of the LT-InN buffer growth conditions on the quality of InN films grown on Si(111) substrate by MBE
Wang, Yan-Hsin
Chen, Wei-Li
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (05) : 848 - 851
[27] Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE
Zheng, YB
Chua, SJ
Huan, CHA
Miao, ZL
JOURNAL OF CRYSTAL GROWTH, 2004, 268 (3-4) : 369 - 374
[28] Epitaxial growth of CIGSe layers on GaP/Si(001) pseudo-substrate for tandem CIGSe/Si solar cells
Barreau, Nicolas
Durand, Olivier
Bertin, Eugene
Letoublon, Antoine
Cornet, Charles
Tsoulka, Polyxeni
Gautron, Eric
Lincot, Daniel
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2021, 233
[29] GaAsBi/GaAs MQWs MBE growth on (411) GaAs substrate
Patil, Pallavi Kisan
Ishikawa, Fumitaro
Shimomura, Satoshi
SUPERLATTICES AND MICROSTRUCTURES, 2016, 100 : 1205 - 1212
[30] Origin of rippled structures formed during growth of Si on Si(001) with MBE
vanWingerden, J
vanHalen, EC
Werner, K
Scholte, PMLO
Tuinstra, F
SURFACE SCIENCE, 1996, 352 : 641 - 645

← 1 2 3 4 5 →