MBE growth of GaP on a Si substrate

被引：18
|
作者：
Sobolev, M. S. [1 ]
Lazarenko, A. A. [1 ]
Nikitina, E. V. [1 ]
Pirogov, E. V. [1 ]
Gudovskikh, A. S. [1 ]
Egorov, A. Yu [1 ]
机构：
[1] Russian Acad Sci, St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 04期
关键词：
MOLECULAR-BEAM EPITAXY;
D O I：
10.1134/S1063782615040235
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the "migration-enhanced epitaxy" procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.
引用
收藏
页码：559 / 562
页数：4
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