Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures

被引：33
作者：
David, Aurelien [1 ]
Hurni, Christophe A. [1 ]
Young, Nathan G. [1 ]
Craven, Michael D. [1 ]
机构：
[1] Soraa Inc, 6500 Kaiser Dr, Fremont, CA 94555 USA
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 03期
关键词：
LIFETIME MEASUREMENTS; TRANSPORT; FEMTOSECOND; TIMES;
D O I：
10.1063/1.4959143
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A detailed study of the small-signal response of III-Nitride quantum well (QW) light-emitting diodes is presented, in which the electrical and optical responses are simultaneously measured. A complete transport-recombination model is introduced to account for measurements. This allows for a proper evaluation of the recombination lifetime and for the accurate quantification of thermionic carrier escape from the QW. Further, a yet-unreported carrier capture mechanism is identified and quantified; it increases with the carrier density in the QW and bears the signature of a Coulomb in-scattering process. Published by AIP Publishing.
引用
收藏
页数：5
相关论文
共 24 条
[1]  
DAVID A, UNPUB
[2]   Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis [J].
David, Aurelien ;
Grundmann, Michael J. .
APPLIED PHYSICS LETTERS, 2010, 96 (10)
[3]   Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes [J].
David, Aurelien ;
Grundmann, Michael J. .
APPLIED PHYSICS LETTERS, 2010, 97 (03)
[4]   Role of defects in the thermal droop of InGaN-based light emitting diodes [J].
De Santi, C. ;
Meneghini, M. ;
La Grassa, M. ;
Galler, B. ;
Zeisel, R. ;
Goano, M. ;
Dominici, S. ;
Mandurrino, M. ;
Bertazzi, F. ;
Robidas, D. ;
Meneghesso, G. ;
Zanoni, E. .
JOURNAL OF APPLIED PHYSICS, 2016, 119 (09)
[5]   Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells [J].
Eliseev, PG ;
Osin'ski, M ;
Li, H ;
Akimova, IV .
APPLIED PHYSICS LETTERS, 1999, 75 (24) :3838-3840
[6]   Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers [J].
Esquivias, I ;
Weisser, S ;
Romero, B ;
Ralston, JD ;
Rosenzweig, J .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (04) :635-646
[7]   Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells [J].
Fan, WH ;
Olaizola, SM ;
Wells, JPR ;
Fox, AM ;
Wang, T ;
Parbrook, PJ ;
Mowbray, DJ ;
Skolnick, MS .
APPLIED PHYSICS LETTERS, 2004, 84 (16) :3052-3054
[8]   Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates [J].
Galler, B. ;
Drechsel, P. ;
Monnard, R. ;
Rode, P. ;
Stauss, P. ;
Froehlich, S. ;
Bergbauer, W. ;
Binder, M. ;
Sabathil, M. ;
Hahn, B. ;
Wagner, J. .
APPLIED PHYSICS LETTERS, 2012, 101 (13)
[9]   EFFECT OF JUNCTION CAPACITANCE ON RISE TIME OF LEDS AND ON TURN-ON DELAY OF INJECTION LASERS [J].
LEE, TP .
BELL SYSTEM TECHNICAL JOURNAL, 1975, 54 (01) :53-68
[10]   THEORETICAL-STUDY OF ELECTRON-TRANSPORT IN GALLIUM NITRIDE [J].
MANSOUR, NS ;
KIM, KW ;
LITTLEJOHN, MA .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) :2834-2836
123