Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm

被引：19
|
作者：
Ha, Neul [1 ]
Mano, Takaaki [1 ]
Dubos, Samuel [1 ]
Kuroda, Takashi [1 ]
Sakuma, Yoshiki [1 ]
Sakoda, Kazuaki [1 ]
机构：
[1] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
来源：
APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 02期
基金：
日本学术振兴会;
关键词：
Gallium alloys - Nanocrystals - Particle beams - Semiconductor alloys - Semiconducting indium phosphide - Light - Quantum entanglement - Aluminum alloys - Indium phosphide - Drops - Ternary alloys - III-V semiconductors - Photons - Semiconductor quantum dots;
D O I：
10.35848/1882-0786/ab6e0f
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 mu m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs. (C) 2020 The Japan Society of Applied Physics
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页数：4
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