Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm

被引：19

作者：

Ha, Neul ^{[1
]}

Mano, Takaaki ^{[1
]}

Dubos, Samuel ^{[1
]}

Kuroda, Takashi ^{[1
]}

Sakuma, Yoshiki ^{[1
]}

Sakoda, Kazuaki ^{[1
]}

机构：

[1] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 02期

基金：

日本学术振兴会;

关键词：

Gallium alloys - Nanocrystals - Particle beams - Semiconductor alloys - Semiconducting indium phosphide - Light - Quantum entanglement - Aluminum alloys - Indium phosphide - Drops - Ternary alloys - III-V semiconductors - Photons - Semiconductor quantum dots;

D O I：

10.35848/1882-0786/ab6e0f

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 mu m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs. (C) 2020 The Japan Society of Applied Physics

引用

页数：4

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