Low-temperature growth of high quality AlN films on carbon face 6H-SiC

被引：23

作者：

Kim, Myunghee ^{[1
]}

Ohta, Jitsuo ^{[2
,3
]}

Kobayashi, Atsushi ^{[2
]}

Fujioka, Hiroshi ^{[2
,3
]}

Shima, Masaharu ^{[1
,4
,5
]}

机构：

[1] Univ Tokyo, Dept Gen Syst Studies, Meguro Ku, Tokyo 1538902, Japan

[2] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

[3] KAST, Kawasaki, Kanagawa 2130012, Japan

[4] Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan

[5] Japan Sci & Technol Agcy, Chiyoda Ku, CREST, Tokyo 1020075, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 01期

关键词：

D O I：

10.1002/pssr.200701246

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlN films have been grown on atomically flat carbon face 6H-SiC (000 (1) over bar) substrates by pulsed laser deposition and their structural properties have been investigated. In-situ reflection high-energy electron diffraction observations have revealed that growth of AlN at 710 degrees C proceeds in a Stranski-Krastanov mode, while typical layer-by-layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X-ray rocking curves for 0004 and 10 (1) over bar2 diffractions of the RT-grown AlN film are 0.05 degrees and 0.07 degrees, respectively. X-ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：13 / 15

页数：3

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