Study of edge charge trapping in gate oxide caused by FN and hot-carrier injection

This paper reports a comprehensive study of the edge charge trapping in the gate oxide overlapping the drain extension caused by Fowler-Norheim. (FN) injection and hot-carrier injection. In this study the edge charge trapping was determined by using a novel approach to analyze the change of the band-to-band tunneling current measured with a three-terminal gate-controlled-diode (GCD) configuration. It was found that both the FN injection (positive or negative) and hot-carrier injection led to positive edge charge trapping. On the other hand, a power-law dependence of the edge charge trapping on the stress time was always observed for all the cases. These results clearly show that the edge charge trapping has no strong dependence on the injection types and the injection polarities.