Study of edge charge trapping in gate oxide caused by FN and hot-carrier injection

被引：1

作者：

Huang, JY ^{[1
]}

Chen, TP ^{[1
]}

Tse, MS ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

COMMAD 2002 PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/COMMAD.2002.1237277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a comprehensive study of the edge charge trapping in the gate oxide overlapping the drain extension caused by Fowler-Norheim. (FN) injection and hot-carrier injection. In this study the edge charge trapping was determined by using a novel approach to analyze the change of the band-to-band tunneling current measured with a three-terminal gate-controlled-diode (GCD) configuration. It was found that both the FN injection (positive or negative) and hot-carrier injection led to positive edge charge trapping. On the other hand, a power-law dependence of the edge charge trapping on the stress time was always observed for all the cases. These results clearly show that the edge charge trapping has no strong dependence on the injection types and the injection polarities.

引用

页码：409 / 412

页数：4

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