A 10-Bit Column-Parallel Single Slope ADC Based on Two-Step TDC with Error Calibration for CMOS Image Sensors

被引:6
作者
Xu, Jiangtao [1 ]
Yu, Jing [1 ]
Huang, Fujun [1 ]
Nie, Kaiming [1 ]
机构
[1] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
CMOS image sensor; column-parallel single-slope ADC; time-to-digital converter; high conversion speed; error calibration; TO-DIGITAL CONVERTER;
D O I
10.1142/S0218126615500541
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a 10-bit column-parallel single slope analog-to-digital converter (SS ADC) with a two-step time-to-digital converter (TDC) to overcome the long conversion time problem in conventional SS ADC for high-speed CMOS image sensors (CIS). The time interval proportional to the input signal is generated by a ramp generator and a comparator, which is digitized by a two-step TDC consisting of coarse and fine conversions to achieve a high-precision time-interval measurement. To mitigate the impact of propagation delay mismatch, a calibration circuit is also proposed to calibrate the delay skew within -T/2 to T/2. The proposed ADC is designed in 0.18 mu m CMOS process. The power dissipation of each column circuit is 232 mu W at supply voltages of 3.3V for the analog circuits and 1.8V for the digital blocks. The post simulation results indicate that the ADC achieves a SNDR of 60.89 dB (9.82 ENOB) and a SFDR of 79.98 dB at a conversion rate of 2 MS/s after calibration, while the SNDR and SFDR are limited to 41.52 dB and 67.64 dB, respectively before calibration. The differential nonlinearity (DNL) and integral nonlinearity (INL) without calibration are +15.80/-15.29 LSB and +1.68/-15.34 LSB while they are reduced down to +0.75/-0.25 LSB and +0.76/-0.78 LSB with the proposed calibration.
引用
收藏
页数:16
相关论文
共 14 条
  • [1] A Low-Power Pilot-DAC Based Column Parallel 8b SAR ADC With Forward Error Correction for CMOS Image Sensors
    Chen, Denis Guangyin
    Tang, Fang
    Bermak, Amine
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2013, 60 (10) : 2572 - 2583
  • [2] A PVT insensitive vernier-based time-to-digital converter with extended input range and high accuracy
    Chen, Poki
    Chen, Chun-Chi
    Zheng, Jia-Chi
    Shen, You-Sheng
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (02) : 294 - 302
  • [3] A high-resolution CMOS time-to-digital converter utilizing a Vernier delay line
    Dudek, P
    Szczepanski, S
    Hatfield, JV
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (02) : 240 - 247
  • [4] Kwang-Bo Cho, 2007, 2007 IEEE International Solid-State Circuits Conference (IEEE Cat. No.07CH37858), P508
  • [5] A High-Speed CMOS Image Sensor With Column-Parallel Two-Step Single-Slope ADCs
    Lim, Seunghyun
    Lee, Jeonghwan
    Kim, Dongsoo
    Han, Gunhee
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (03) : 393 - 398
  • [6] Muung Shin, 2010, Proceedings of the 2010 17th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2010), P863, DOI 10.1109/ICECS.2010.5724649
  • [7] A 9-bit, 14 μW and 0.06 mm2 Pulse Position Modulation ADC in 90 nm Digital CMOS
    Naraghi, Shahrzad
    Courcy, Matthew
    Flynn, Michael P.
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (09) : 1870 - 1880
  • [8] Nelson F.Z., 2009, IEEE WORKSH MICR EL, P1
  • [9] Park M, 2009, IEEE INT SYMP CIRC S, P1125, DOI 10.1109/ISCAS.2009.5117958
  • [10] A LOW-POWER CMOS TIME-TO-DIGITAL CONVERTER
    RAISANENRUOTSALAINEN, E
    RAHKONEN, T
    KOSTAMOVAARA, J
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (09) : 984 - 990