Electronic, optical and thermoelectric properties of a novel two-dimensional SbXY (X = Se, Te; Y = Br, I) family: ab initio perspective

被引:61
作者
Bafekry, A. [1 ]
Faraji, M. [2 ]
Fadlallah, M. M. [3 ]
Hoat, D. M. [4 ,5 ]
Jappor, H. R. [6 ]
Sarsari, I. Abdolhosseini [7 ]
Ghergherehchi, M. [8 ]
Feghhi, S. A. H. [1 ]
机构
[1] Shahid Beheshti Univ, Dept Radiat Applicat, Tehran 1983969411, Iran
[2] TOBB Univ Econ & Technol, Sogutozu Caddesi 43 Sogutozu, TR-06560 Ankara, Turkey
[3] Benha Univ, Fac Sci, Dept Phys, Banha 13518, Egypt
[4] Duy Tan Univ, Inst Theoret & Appl Res, Hanoi 100000, Vietnam
[5] Duy Tan Univ, Fac Nat Sci, Da Nang 550000, Vietnam
[6] Univ Babylon, Coll Educ Pure Sci, Dept Phys, Hilla, Iraq
[7] Isfahan Univ Technol, Dept Phys, Esfahan 8415683111, Iran
[8] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 6419, South Korea
基金
新加坡国家研究基金会;
关键词
1ST PRINCIPLES; HONEYCOMB-LIKE; 1ST-PRINCIPLES; SBSEI; EXFOLIATION; PERFORMANCE; MONOLAYERS; GRAPHENE; FIELD;
D O I
10.1039/d1cp03706d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Recent developments in the synthesis of highly crystalline ultrathin BiTeX (X = Br, Cl) structures [Debarati Hajra et al., ACS Nano 14, 15626 (2020)] have led to the exploration of the atomic structure, dynamical stability, and electronic, optical, and thermoelectric properties of SbXY (X = Se, Te; Y = Br, I) monolayers via density functional calculations. The calculated phonon spectrum, elastic stability conditions, and cohesive energy verified the stability of the studied SbXY monolayers. The mechanical properties reveal that all studied monolayers are stable and brittle. Based on PBE (PBE + SOC) functional calculations, the SbXY monolayers are semiconductors with indirect bandgaps. The calculated bandgaps using HSE (HSE + SOC) for SbSeBr, SbSeI, SbTeBr, and SbTeI monolayers are between 1.45 and 1.91 eV, which are appealing for applications in nanoelectronic devices. The signature of the Rashba effect appears in the SbXY monolayer. The SbXY monolayers are visible-light active. Hole doping can be an efficient way to increase the electricity production of SbXY monolayers from waste heat energy. This study suggests that SbXY (X = Se, Te; Y = Br, I) monolayers represent promising new electronic, optical, and energy conversion systems.
引用
收藏
页码:25866 / 25876
页数:11
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