Traceable Nanoscale Measurements of High Dielectric Constant by Scanning Microwave Microscopy

被引:5
作者
Richert, Damien [1 ]
Moran-Meza, Jose [1 ]
Kaja, Khaled [1 ]
Delvallee, Alexandra [1 ]
Allal, Djamel [1 ]
Gautier, Brice [2 ,3 ]
Piquemal, Francois [1 ]
机构
[1] Lab Natl Metrol & Essais, F-78197 Trappes, France
[2] Inst Natl Sci Appl, F-69100 Villeurbanne, France
[3] Inst Nanotechnol Lyon, F-69100 Villeurbanne, France
基金
欧盟地平线“2020”;
关键词
dielectric constant; high-kappa dielectric; least square adjustment method; micrometer-sized capacitor; nanoscale capacitance measurements; PMN-PT; PZT; scanning microwave microscopy; uncertainty; CAPACITANCE; MEMORY;
D O I
10.3390/nano11113104
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The importance of high dielectric constant materials in the development of high frequency nano-electronic devices is undeniable. Their polarization properties are directly dependent on the value of their relative permittivity. We report here on the nanoscale metrological quantification of the dielectric constants of two high-kappa materials, lead zirconate titanate (PZT) and lead magnesium niobate-lead titanate (PMN-PT), in the GHz range using scanning microwave microscopy (SMM). We demonstrate the importance of the capacitance calibration procedure and dimensional measurements on the weight of the combined relative uncertainties. A novel approach is proposed to correct lateral dimension measurements of micro-capacitive structures using the microwave electrical signatures, especially for rough surfaces of high-kappa materials. A new analytical expression is also given for the capacitance calculations, taking into account the contribution of fringing electric fields. We determine the dielectric constant values epsilon(PZT) = 445 and epsilon(PMN-PT) = 641 at the frequency around 3.6 GHz, with combined relative uncertainties of 3.5% and 6.9% for PZT and PMN-PT, respectively. This work provides a general description of the metrological path for a quantified measurement of high dielectric constants with well-controlled low uncertainty levels.
引用
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页数:19
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