Anisotropic Thermal Conductivity of Crystalline Layered SnSe2

被引:36
作者
Xiao, Peng [1 ,2 ,3 ]
Chavez-Angel, Emigdio [1 ,2 ]
Chaitoglou, Stefanos [4 ]
Sledzinska, Marianna [1 ,2 ]
Dimoulas, Athanasios [4 ]
Sotomayor Torres, Clivia M. [1 ,2 ]
El Sachat, Alexandros [1 ,2 ]
机构
[1] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Barcelona 08193, Spain
[2] BIST, Barcelona 08193, Spain
[3] Univ Autonoma Barcelona, Dept Fis, Barcelona 08193, Spain
[4] Natl Ctr Sci Res Demokritos, Athens 15310, Greece
关键词
Phonon transport; mean free path; SnSe2; thermal conductivity anisotropy; frequency-domain thermoreflectance; Raman thermometry; OPTICAL-PROPERTIES; THERMOELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; TRANSPORT-PROPERTIES; SCATTERING;
D O I
10.1021/acs.nanolett.1c03018
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The degree of thermal anisotropy affects critically key device-relevant properties of layered two-dimensional materials. Here, we systematically study the in-plane and cross-plane thermal conductivity of crystalline SnSe2 films of varying thickness (16-190 nm) and uncover a thickness-independent thermal conductivity anisotropy ratio of about similar to 8.4. Experimental data obtained using Raman thermometry and frequency domain thermoreflectance showed that the in-plane and cross-plane thermal conductivities monotonically decrease by a factor of 2.5 with decreasing film thickness compared to the bulk values. Moreover, we find that the temperature-dependence of the in-plane component gradually decreases as the film becomes thinner, and in the range from 300 to 473 K it drops by more than a factor of 2. Using the mean free path reconstruction method, we found that phonons with MFP ranging from similar to 1 to 53 and from 1 to 30 nm contribute to 50% of the total in-plane and cross-plane thermal conductivity, respectively.
引用
收藏
页码:9172 / 9179
页数:8
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