Sources of n-type conductivity in ZnO

被引：52

作者：

McCluskey, M. D. ^{[1
]}

Jokela, S. J. ^{[1
]}

机构：

[1] Washington State Univ, Dept Phys & Astron, Pullman, WA 99164 USA

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷

基金：

美国国家科学基金会;

关键词：

hydrogen; infrared; ZnO; SIMS;

D O I：

10.1016/j.physb.2007.08.186

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zinc oxide (ZnO) is a strong candidate for energy-efficient white fighting and numerous optoelectronic applications. Hydrogen impurities play important roles, good and bad, in the pursuit of reliable p-type doping of ZnO. In pervious work, we identified hydrogen donors with the back-bonded or "anti-bonding" orientation, with an angle of 111 degrees to the c-axis. It is possible, however, that these hydrogen donors are complexed with another defect. Impurities besides hydrogen are also donors in as-grown ZnO. Results from secondary ion mass spectroscopy (SIMS) show significant concentrations of Al in samples of bulk single-crystal ZnO obtained from Cermet, Inc., Ga and B in samples from Eagle-Picher, and Si in both. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：355 / 357

页数：3

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