Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells

被引:41
|
作者
Hu, W. G. [1 ]
Inoue, T. [2 ]
Kojima, O. [1 ,2 ]
Kita, T. [1 ,2 ]
机构
[1] Kobe Univ, CREATE, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Grad Sch Engn, Kobe, Hyogo 6578501, Japan
关键词
Absorption co-efficient - Detailed balance - High conversion efficiency - Intermediate bands - Optimum value - Quantum dot solar cells - Shape and size - Subband gap absorption;
D O I
10.1063/1.3516468
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of absorption coefficients were incorporated in a detailed balance model to analyze the intermediate-band (IB) configuration in quantum dot (QD) solar cells. Our results show that the optimum IB level, EIB, depends on the ratio of two subbandgap absorption coefficient constants, alpha(IC0)/alpha(VI0). Efficiency contour plots have been calculated to determine the optimum values of EIB and alpha(IC0)/alpha(VI0). In many cases, a large alpha(IC0) results in high conversion efficiency, especially for thin QD solar cells. Optimizing QD shape and size is a promising method to increase alpha(IC0). Increasing the QD total thickness partially addresses the urgent demand for a large alpha(IC0). (C) 2010 American Institute of Physics. [doi:10.1063/1.3516468]
引用
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页数:3
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