Construction of thermally stable 3,6-disubstituted spiro-fluorene derivatives as host materials for blue phosphorescent organic light-emitting diodes

被引:20
|
作者
Wang, Lei [1 ]
Pan, Biao [1 ]
Zhu, Liping [2 ]
Wang, Bo [1 ]
Wang, Yixing [1 ]
Liu, Yakun [1 ]
Jin, Jiangjiang [1 ]
Chen, Jiangshan [2 ]
Ma, Dongge [2 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
关键词
3,6-Spirobifluorene; High triplet energy; High T-g; Blue phosphorescent organic light-emitting device; Host materials; Low roll-off; HIGHLY EFFICIENT BLUE; HIGH QUANTUM EFFICIENCY; BIPOLAR HOST; TRIPLET-ENERGY; MOLECULAR MATERIALS; RECENT PROGRESS; DESIGN TACTICS; ROLL-OFF; OLEDS; CARBAZOLE;
D O I
10.1016/j.dyepig.2014.11.011
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Four novel thermally stable host materials, 9,9'-(9,9-diphenyl-9H-fluorene-3,6-diyl)bis(9H-carbazole) (BBDC), 3-(3,6-bis(diphenylphosphoryl)-9,9-diphenylfluorene (BBDP), 3,6-di(9H-carbazol-9-yl)-9,9'-spirobi[fluorene] (BSBDC), 3,6-di(9H-carbazol-9-yl)-9,9'-spirobi[fluorene] (BSBDP) were designed and synthesized by linking phosphine oxide or carbazole moieties to the 3,6-position of a spirofluorene core. In comparison to the conventional 2,7-disubstituted homologues, 3,6-disubstituted spiro-fluorene can offer more versatile and advanced properties in terms of higher triplet energy (>2.8 eV) and higher glass-transition temperatures (ca. 215 degrees C). Accordingly, doped blue-emitting devices were fabricated and the device with BSBDP as host exhibited a very low turn-on voltage of 2.8 V and maximum current efficiency of 34.2 cd A(-1), external quantum efficiency of 18.7% and power efficiency of 34.4 lm W-1. These results demonstrate that 3,6-disubstituted spiro-fluorene derivatives are promising host materials for blue phosphorescent organic light-emitting devices (PhOLEDs). (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:222 / 230
页数:9
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