Direct observation of a neutral Mn acceptor in Ga1-xMnxAs by resonant x-ray emission spectroscopy -: art. no. 121202

被引：7

作者：

Ishiwata, Y ^{[1
]}

Takeuchi, T

Eguchi, R

Watanabe, M

Harada, Y

Kanai, K

Chainani, A

Taguchi, M

Shin, S

Debnath, MC

Souma, I

Oka, Y

Hayashi, T

Hashimoto, Y

Katsumoto, S

Iye, Y

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[2] Tokyo Univ Sci, Dept Appl Phys, Shinjyuku Ku, Tokyo 1628601, Japan

[3] RIKEN, SPring 8, Mikazuki, Hyogo 6795143, Japan

[4] Tohoku Univ, IMRAM, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.71.121202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the Mn acceptor state of III-V-based diluted magnetic semiconductor Gal(1-x)Mn(x)As by means of high-resolution resonant x-ray emission spectroscopy, across the Mn L-3 edge. We identify the coexistence of signals related to the neutral impurity A(0) and the ionized acceptor state A(-) in Ga1-xMnxAs. This fact suggests that double-exchange-like interaction exists in the ferromagnetic coupling in addition to the free-carrier-induced interaction.

引用

页数：4

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