Midinfrared injection-pumped laser based on a III-V/II-VI hybrid heterostructure with submonolayer InSb insets

被引：15

作者：

Solov'ev, VA ^{[1
]}

Sedova, IV ^{[1
]}

Lyublinskaya, OG ^{[1
]}

Semenov, AN ^{[1
]}

Mel'tser, BY ^{[1
]}

Sorokin, SV ^{[1
]}

Terent'ev, YV ^{[1
]}

Ivanov, SV ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1894443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lasing at 3.075 mu m (T = 60 K) in a regime of pulsed injection pumping has been obtained in an AlGaAsSb/InAs/CdMgSe double hybrid heterostructure with the active region comprising an InAs layer with submonolayer InSb insets. The electroluminescence (EL) spectrum of the heterostructure has been studied for various values of the pumping current up to the stimulated emission threshold. An increase in the pumping current leads to a short-wavelength shift and a change in the EL band structure, which is explained by the occupation of higher states by the charge carriers in InSb quantum dots and/or in the adjacent InAsSb layer. (C) 2005 Pleiades Publishing, Inc.

引用

页码：235 / 237

页数：3

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