Crystallization of amorphous titanium oxide films upon annealing in an oxygen atmosphere

被引：11

作者：

Bulyarskiy, Sergey, V ^{[1
]}

Koiva, Daria A. ^{[1
]}

Gusarov, Georgy G. ^{[1
]}

Latipov, Egor, V ^{[1
]}

Rudakov, Grigory A. ^{[1
]}

Svetukhin, Vyacheslav V. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Nanotechnol Microelect, Moscow, Russia

[2] Sci Mfg Complex Technol Ctr, Moscow, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2022年 / 283卷

关键词：

Titanium oxide films; Crystallization; Oxygen vacancies; Diffusion; Nanocrystal growth; Growth kinetics; THIN-FILMS; DIELECTRIC-CONSTANT; TIO2; 110; PHOTOLUMINESCENCE; DEPOSITION; VACANCIES; GROWTH; PRECIPITATION; TRANSPORT; KINETICS;

D O I：

10.1016/j.mseb.2022.115802

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Titanium oxide films were synthesized by magnetron sputtering in this work and were annealed at temperatures of 700, 800, and 900 C in an oxygen atmosphere. The morphological, optical and luminescent properties of the films before and after annealing were studied at different annealing times. The time constants for crystallization of X-ray amorphous films were calculated, and the activation energy of the crystallization process was determined in the order of 0.6 eV. The kinetics model of titanium oxide nanocrystals growth, which was developed in this work, showed that this activation energy corresponds to the diffusion energy of oxygen vacancies. This process is decisive for the growth of titanium oxide nanocrystals upon annealing in an oxygen atmosphere.

引用

页数：9

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